Trina Solar noted that the n-type mono IBC cell used a large-area (243.18 cm2) 6 inch N-type monocrystalline silicon wafer, with a low-cost industrial IBC process, featuring conventional tube doping technologies and fully screen-printed metallization.

The champion cell was described with the following characteristics: an open-circuit voltage Vocof 715.6 mV, a short-circuit current density Jsc of 42.27 mA/cm2 and a fill factor FF of 82.81%.

Trina Solar’s State Key Laboratory has currently broken 18 world records in PV cell efficiency and module power output.

The SMSL is not in production of the IBC cell technology but is regarded as a key next-generation technology after P-type mono PERC (Passivated Emitter Rear Cell) has pushed cell conversion efficiencies at low cost to above 24% in volume production.